IGBT Infineon FF600R12ME4C_B11

Module IGBT Infineon FF600R12ME4C_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 47 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 81.5 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.0370 K/W (per IGBT)
Thermal resistance case–heatsink (RthCH) 0.0350 K/W (per IGBT, λgrease = 1 W/(m·K))
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 600 A, VF = 1.9 V (Tvj = 25 °C typ)
Integrated temperature sensor NTC
Package: EconoDUAL™ 3 IGBT module, Cu baseplate, Al₂O₃ internal insulation, PressFIT contacts
Technology IGBT4 - E4

Title:
FF600R12ME4C_B11 | IGBT Module 1200V 600A EconoDUAL 3 – FOIND
FF600R12ME4C_B11 Infineon EconoDUAL 3 IGBT module 1200V 600A with integrated diode (VF = 1.9 V) and NTC sensor, featuring PressFIT contacts and high-power density. FOIND solutions for industrial converters, motor drives, UPS systems, and wind turbines.