IGBT Infineon FF600R12ME4_B11

Module IGBT Infineon FF600R12ME4_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 83 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 72 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.037 K/W (per IGBT)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 600 A, VF = 1.65 V
Integrated temperature sensor NTC
Package: EconoDUAL™ 3 IGBT module, Cu baseplate, PressFIT, Al₂O₃ internal insulation
Technology: IGBT4 - E4

Title:
FF600R12ME4_B11 | IGBT Module 1200V 600A EconoDUAL 3 – FOIND FF600R12ME4_B11 Infineon EconoDUAL3 IGBT module 1200V 600A with integrated diode and NTC sensor. FOIND solutions for industrial converters, motor drives, UPS systems, and wind turbines.