IGBT Infineon FF600R12KE4P

Module IGBT Infineon FF600R12KE4P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 29.5 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 70 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.065 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 600 A
Package: 62 mm C Series IGBT module, insulated copper baseplate, pre-applied thermal interface material
Title: FF600R12KE4P | IGBT Module 1200V 600A 62mm – FOIND
Meta description: FF600R12KE4P Infineon IGBT module 1200V 600A with pre-applied TIM and integrated diode. FOIND solutions for UPS systems, motor drives, wind turbines and high power converters.