IGBT Infineon FF600R12IE4V

Module IGBT Infineon FF600R12IE4V

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 61 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 73 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 45.0 K/kW (per IGBT)
Thermal resistance case–heatsink (RthCH) 14.0 K/kW (per IGBT, λgrease = 1 W/(m·K))
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 600 A, VF = 1.8 V (Tvj = 25 °C typ)
Integrated temperature sensor NTC
Package: PrimePACK™ 2 IGBT module, Cu baseplate, Al₂O₃ internal insulation
Technology IGBT4 - E4

Title:
FF600R12IE4V | IGBT Module 1200V 600A PrimePACK 2 – FOIND
FF600R12IE4V Infineon PrimePACK2 IGBT module 1200V 600A with integrated diode (VF = 1.8 V) and NTC sensor, designed for high-power hybrid electric vehicle (HEV) applications. FOIND solutions for converters, motor drives, and industrial inverters.