IGBT Infineon FF225R12ME4P

Module IGBT Infineon FF225R12ME4P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 225 A
Repetitive peak collector current (ICRM) 450 A
Collector-emitter saturation voltage (VCEsat) 2.10 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 12.5 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 26.5 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.175 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 225 A
Integrated temperature sensor NTC
Thermal interface material Pre-applied
Package: EconoDUAL™ 3 IGBT module, insulated copper baseplate

Title: FF225R12ME4P | IGBT Module 1200V 225A EconoDUAL 3 – FOIND
Meta description: FF225R12ME4P Infineon IGBT module 1200V 225A EconoDUAL 3 with pre-applied thermal interface material, integrated diode and NTC. FOIND solutions for motor drives, servo drives, UPS systems and wind turbines.