IGBT Infineon FF1800R23IE7P

Module IGBT Infineon FF1800R23IE7P

Collector-emitter voltage (VCES) 2300 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector-emitter saturation voltage (VCEsat) 2.15 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 815 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 1160 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.0274 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 2300 V / 1800 A
Integrated temperature sensor NTC
Thermal interface material Pre-applied
Package: PrimePACK™ 3+ B IGBT module, insulated copper baseplate

Title: FF1800R23IE7P | IGBT Module 2300V 1800A PrimePACK 3+ B – FOIND
Meta description: FF1800R23IE7P Infineon IGBT module 2300V 1800A PrimePACK 3+ B with integrated diode, NTC and pre-applied thermal interface material. FOIND solutions for high power converters, medium voltage drives, solar inverters and industrial power systems.