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IGBT Infineon FF150R17ME3G
IGBT Power Module – FF150R17ME3G
Product code: FF150R17ME3G
Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1700 V
Nominal Collector Current (IC nom) 150 A
Peak Collector Current (ICRM) 300 A (tp limited by Tvj op)
Technology Trench / Fieldstop IGBT + Emitter Controlled Diode
Configuration Inverter / Half-Bridge
Gate-Emitter Voltage (VGES) ±20 V
Operating Junction Temperature (Tvj op) –40 … +125 °C
Isolation Voltage (VISOL) 3.4 kV AC (50 Hz, 1 min)
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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