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IGBT Infineon FF150R12KT3G
IGBT Power Module – FF150R12KT3G
Product code: FF150R12KT3G
Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1200 V
Nominal Collector Current (IC nom) 150 A
Maximum DC Collector Current (IC) 225 A (TC = 25 °C, Tvj max = 150 °C)
Peak Collector Current (ICRM) 300 A (tp = 1 ms)
Technology Trench / Fieldstop IGBT3 + Emitter Controlled High Efficiency Diode
Configuration Inverter / Half-Bridge
Gate-Emitter Voltage (VGES) ±20 V
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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