IGBT Infineon FD1000R33HE3-K

IGBT Module Infineon FD1000R33HE3-K
Product code: FD1000R33HE3-K

Category: IGBT Module – Single
Voltage (VCES): 3300 V
Nominal Current (IC): 1000 A
Gate-Emitter Voltage (VGES): ±20 V
Collector-Emitter Leakage Current (ICES): 5 mA
Gate-Emitter Leakage Current (IGES): 400 nA
Gate Threshold Voltage (VGE(th)): 5.2 – 6.4 V
Package / Outline: IHMB housing with AlSiC baseplate
Configuration: Single IGBT
Technology: Fast Trench / Fieldstop IGBT 3

FD1000R33HE3-K is a 3300 V 1000 A single IGBT module.
It is intended for high-power applications such as UPS systems, medium-voltage converters, chopper applications, traction drives, motor drives, and wind turbines, providing low VCEsat, low switching losses, high DC stability, and high short-circuit capability.